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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-126 package *Complement to type 2SB1086A *Wide area of safe operation *High breakdown voltage :BVCEO=160V(min) APPLICATIONS *For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SD1563A Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 160 160 5 1.5 3.0 10 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD1563A SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)EBO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT COB Collector-emitter breakdown voltage IC=1mA ;IB=0 IE=50A ;IC=0 IC=50A ;IE=0 IC=1.0A ;IB=0.1A IC=1.0A ;IB=0.1A VCB=120V; IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 160 V Emitter-base breakdown voltage 5 V Collector-base breakdown voltage 160 V Collector-emitter saturation voltage 2.0 V Base-emitter saturation voltage 1.5 V Collector cut-off current 1.0 A Emitter cut-off current 1.0 A DC current gain 56 270 Transition frequency 80 MHz Output capacitance 20 pF hFE Classifications N 56-120 P 82-180 Q 120-270 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1563A Fig.2 Outline dimensions 3 |
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